Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passi…
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ISSN
| 2079-9292 |
vol.
| 12(7) |
pp.
1667-1677
- 이전글Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication 24.08.01
- 다음글High Selectivity Hydrogen Gas Sensor Based on WO3/Pd-AlGaN/GaN HEMTs 24.08.01
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