Delta-Doped β-(Al0.17Ga0.83)2O3/Ga2O3 Double-Channel Heterostructure M…
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ISSN
1862-6319
vol.
219
pp.
2100842
- 이전글β-(Al0.17Ga0.83)2O3 Delta-Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back-Barrier Layer: A Comprehensive Technology Computer-Aided Design Analysis 23.02.27
- 다음글Temperature- and Frequency-Dependent Ferroelectric Chracteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films 23.02.27
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