Monolithic E/D-mode P-GaN/AlGaN/GaN HFETs Using Reactivation Annealing…
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ISSN
1369-8001
vol.
179
pp.
108483-108486
- 이전글P-GaN/P-AlGaN/AlGaN/GaN Heterojunction Field-Effect Transistor with a Threshold Voltage of 6 V 24.08.01
- 다음글Normally-off recessed gate β-Ga2O3 MOSHFETs with a modulation-doped heterostructure back-barrier 24.08.01
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