|
48 |
Electronics |
Content-Addressable Memory System using a Nanoelectromechanical Memory Switch |
10.3390/electronics10222859 |
20220207 |
|
|
47 |
Electronics |
Novel In-memory Computing Adder using 8+T SRAM |
10.3390/electronics11030481 |
20220316 |
|
|
46 |
European Conference on Computer Vision |
Prune Your Model Before Distill It |
10.1007/978-3-031-20083-0_8 |
20221103 |
|
|
45 |
International Conference on Machine Learning |
Neural Tangent Kernel Analysis of Deep Narrow Neural Networks |
10.48550/arXiv.2202.02981 |
20220207 |
|
|
44 |
International Conference on Artificial Intelligence and Statistics |
An Information-Theoretic Justification for Model Pruning |
10.48550/arXiv.2102.08329 |
20210216 |
|
|
43 |
Applied Science |
Age Estimation from fMRI Data Using Recurrent Neural Network |
10.3390/app12020749 |
20220112 |
|
|
42 |
Materials |
Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors |
10.3390/ma15217475 |
20221025 |
|
|
41 |
Micromachines |
Normally-Off β-Ga2O3 MOSFET with an Epitaxial Drift Layer |
10.3390/mi13081185 |
20220727 |
|
|
40 |
Results in Physics |
Electrical Properties of 2H-Si Microwire Grown by Mixed-Source Hydride Vapor Phase Epitaxy |
10.1016/j.rinp.2022.105857 |
20220720 |
|
|
39 |
Journal of Electromagnetic Engineering and Science |
Analysis of Hot Carrier Degradation in 0.25-um Schottky Gate AlGaN/GaN HEMTs |
10.26866/jees.2022.3.r.89 |
20220531 |
|
|
38 |
Phys. Status Solidi A |
β-(Al0.17Ga0.83)2O3 Delta-Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back-Barrier Layer: A Comprehensive Technology Computer-Aided Design Analysis |
10.1002/pssa.202100732 |
20220423 |
|
|
37 |
Phys. Status Solidi A |
Delta-Doped β-(Al0.17Ga0.83)2O3/Ga2O3 Double-Channel Heterostructure MODFETs |
10.1002/pssa.202100842 |
20220403 |
|
|
36 |
Materials |
Temperature- and Frequency-Dependent Ferroelectric Chracteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films |
10.3390/ma15062097 |
20220312 |
|
|
35 |
Applied Physics Letters |
On/Off-State Noise Characteristics in AlGaN/GaN HFET with AlN Buffer Layer |
10.1063/5.007413710.1063/5.0074137 |
20220103 |
|
|
34 |
JOURNAL OF ELECTROMAGNETIC ENGINEERING AND SCIENCE |
Design of a Wideband Printed Patch Dipole Antenna with a Balanced On-Board Feeding Network |
https://doi.org/10.26866/jees.2022.6.r.132 |
20221130 |
|
